Measurements were made of stress-induced dichroism of the ν3 mode of oxygen in Si1−xGex compounds, and of the dichroism recovery kinetics during isothermal annealing. It was shown that the values introduced by uniaxial stress dichroism decreased with increasing Ge content. Two components were found in the dichroism annealing kinetics. It was assumed that the two components of diffusion relaxation corresponded to the diffusion of oxygen in differing nearest-neighbour environments: one component corresponding to oxygen atoms surrounded by silicon atoms, and the other to oxygen atoms whose neighbour was a Ge atom. The diffusivity was determined for each of the components. It was shown that the diffusivity of oxygen decreased with increasing Ge content for both configurations.

Oxygen Diffusion in Si1−xGex Alloys. L.I.Khirunenko, Y.V.Pomozov, M.G.Sosnin, A.V.Duvanskii, N.A.Sobolev, N.V.Abrosimov, H.Riemann: Physica B, 2009, 404[23-24], 4698-700