Defect structure of Czochralski-grown oxygen-containing silicon–germanium samples with a Ge content 1.5 x 1018/cm3, subjected to processing for 5h at up to 1400K under hydrostatic Ar pressure up to 1.1GPa, was investigated by synchrotron topography, high-resolution X-ray diffraction, photoluminescence and related methods. Ge admixture prevents formation of extended defects at processing done under 105Pa. Such defects were created, however, in Si–Ge processed at 1400K under high pressure (1.1GPa).

Defects in Czochralski-Grown Si–Ge Annealed under High Hydrostatic Pressure. A.Misiuk, W.Wierzchowski, B.Surma, A.Wnuk, J.Bak-Misiuk, K.Wieteska, A.Barcz, A.Andrianakis, C.A.Londos, D.Yang, M.Prujszczyk, W.Graeff: Radiation Physics and Chemistry, 2009, 78[10], S64-6