Dislocations in p-type Si1− xGex single crystals (2 to 8at%Ge), grown using the Czochralski technique, were investigated using synchrotron white-beam topography in transmission. As the Ge concentration increased, the dislocation structure evolved from individual dislocations to slip-bands and sub-grain boundaries, and the dislocation density increased from less than 102 to 105–106/cm2 at 8at%.

Investigation of Dislocations in Czochralski Grown Si1−xGex Single Crystals. T.S.Argunova, J.W.Jung, J.H.Je, N.V.Abrosimov, I.V.Grekhov, L.S.Kostina, A.V.Rozhkov, L.M.Sorokin, A.G.Zabrodskii: Journal of Physics D, 2009, 42[8], 085404