Laser-scattering observations were made of a misfit dislocation in a SiGe film on a Si substrate. Using this technique, the velocity of a threading dislocation in a 56nm-thick Si0.76Ge0.24 film was also determined over a wide temperature range. It was found that the threading dislocation velocity was described by an Arrhenius relationship, with an activation energy of 1.9eV. The threading-dislocation velocity at 375C was determined by extrapolating the Arrhenius plots for the high-temperature region. This indicated that threading dislocation motion in a Si0.76Ge0.24 film was thermally activated at the low temperature. The present technique was also effective for examining regions having a high density of misfit dislocations.

Observation of Dislocation Motion in Si1-xGex Thin Film on Si Substrate by Laser Scattering Method. A.Hara, N.Tamura, T.Nakamura: Japanese Journal of Applied Physics, 2009, 48[2], 020204