Misfit defects in strained-SiGe layers grown on (100) Si-substrates by reduced pressure chemical vapour deposition were investigated by using high-resolution X-ray diffraction and transmission electron microscopy. While (004) omega rocking curve (ω-RC) was not sensitive to 60° misfit dislocations in a slightly strain-relaxed sample, they caused an asymmetrical shape to (113) ω-RC. On the other hand, it was found that the partial dislocations associated with stacking faults in highly strain-relaxed sample contributed to significant and symmetric peak broadening of both ω-RCs.

Observation of Defects Evolution in Strained SiGe Layers during Strain Relaxation. J.H.Jang, M.S.Phen, K.Siebein, K.S.Jones, V.Craciun: Materials Letters, 2009, 63[2], 289-91