In order to better understand the effects of the hydrogen incorporation on the defects and the disorder in the undoped nano/microcrystalline SiGe:H, a comparative study was made of samples deposited under various plasma conditions. With variation of the pressure, it was possible  to change the structure of SiGe:H films. A combination of infra-red spectroscopy, CPM, PDS and thermal desorption measurements were used to study the thermal dependence of defect density, disorder, as well as hydrogen concentration. The film mechanical properties were tested using depth-sensing indentation techniques. The results showing a different hydrogen bonding with the change of deposition conditions were interpreted as a whole by terms of the specific local hydrogen bonding environment, related to different growth mechanism.

Structural and Defect Changes of Hydrogenated SiGe Films due to Annealing up to 600C. P.Sládek, V.Buršíková, P.Stahel: Physica Status Solidi C, 2010, 7[3-4], 820-3