An investigation of diffusion in p- and n+ Si substrates revealed that a contribution which was associated with neutral point defects was predominant. This could be described by:

D (cm2/s) = 1.443 x 100exp[-3.56(eV)/kT]

This was almost the same as the expression for intrinsic B diffusion. The out-diffusion of In was significant, and the surface transport coefficient could be approximated as being infinite. By assuming a Gaussian as-implanted profile, analytical models were derived for the In diffusion profile as well as for the loss due to out-diffusion. Both agreed well with experimental data.

Diffusion Coefficient of Indium in Si Substrates and Analytical Redistribution Profile Model K.Suzuki, H.Tashiro, T.Aoyama: Solid-State Electronics, 1999, 43[1], 27-31