The p-n junction method was used to investigate the diffusion of K into Si. The samples used were p-type single crystals with no impurities other than B, and a mean dislocation density of less than 103/cm2. It was found that the results for between 1100 and 1200C could be described by:

D(cm2/s) = 1.1 x 10-3exp[-0.76(eV)/kT]

L.Svob: Solid State Electronics, 1967, 10[10], 991-6