Electrical conductivity and p-n junction depth measurements were used to study the diffusion of K (introduced by ion implantation) in crystals with very low O and N concentrations. At between 500 and 800C, the diffusivity obeyed the Arrhenius temperature dependence:

D(cm2/s) = 1.1 x 10-8exp[-0.80(eV)/kT]

E.I.Zorin, P.V.Pavlov, D.I.Tetelbaum, A.F.Khokhlov: Fizika i Tekhnika Poluprovodnikov, 1972, 6[1], 28-33