The diffusivity was studied at between 900 and 1200C, using deep-level transient spectroscopy and tracer methods. Particular emphasis was placed upon well-defined boundary conditions. The surface concentrations deduced from the tracer method agreed with solubility data, and the concentration of electrically active interstitial Mn was found to represent 60 to 70% of the total Mn content. Both methods yielded identical diffusion coefficients. These could be described by:

D(cm2/s) = 6.9 x 10-4exp[-0.63(eV)/kT]

Diffusion of Manganese in Silicon Studied by Deep-Level Transient Spectroscopy and Tracer Measurements. D.Gilles, W.Bergholz, W.Schroter: Journal of Applied Physics, 1986, 59[10], 3590-3