It was reported that the activation energy for the diffusion of N in Si was 4.57eV. This value was derived using a relationship proposed by Rusinov & Dubinin [1965] and was based upon the enthalpy of formation of NI3.

V.A.Panteleev, E.I.Akinkina: Zhurnal Fizicheskoi Khimii, 1968, 42[4], 922-4