The diffusivity was determined using a radiation activation method which was based upon the fact that, under bombardment by inert gas ions, the N gas molecules dissolved in the Si were released. Subsequent diffusion annealing in a N atmosphere resulted in the migration of N atoms through substitutional positions. At between 700 and 800C, the diffusivity could be described by:

D(cm2/s) = 5 x 10-2exp[-3.65(eV)/kT]

N.V.Denisova, E.I.Zorin, P.V.Pavlov, D.I.Tetelbaum, A.F.Khokhlov: Izvestiya Akademii Nauk SSSR – Neorganicheskie Materialy, 1975, 11[12], 2236-7