The p-n junction method was used to investigate the diffusion of Na into p-type single crystals with no impurities other than B, and a mean dislocation density of less than 103/cm2. It was found that the results for 1100 to 1200C could be described by:

D(cm2/s) = 1.65 x 10-3exp[-0.73(eV)/kT]

L.Svob: Solid State Electronics, 1967, 10[10], 991-6