A study was made of the diffusion of electrically active Ni in floating zone-melted Si using Hall coefficient and resistivity methods. It was found that the electrically active Ni atoms occupied substitutional sites and diffused via a dissociative mechanism, with a diffusivity at between 850 and 1100C was described by:

D(cm2/s) = 3 x 101exp[-4.5(eV)/kT]

M.Yoshida, K.Saito: Japanese Journal of Applied Physics, 1967, 6[5], 573-81