An in situ low-angle X-ray diffraction technique was used to investigate interdiffusion in various metal/amorphous-Si nm-scale compositionally modulated multilayers. The interdiffusivities were deduced by monitoring the decay of the first-order modulation peak as a function of annealing time. The results for interdiffusion in the Ni/Si multi-layers were described by:

D (cm2/s) = 2.13 x 10-13exp[-0.69(eV)/kT]

Interdiffusion in Nanometer-Scale Multilayers Investigated by in situ Low-Angle X-Ray Diffraction W.H.Wang, H.Y.Bai, M.Zhang, J.H.Zhao, X.Y.Zhang, W.K.Wang: Physical Review B, 1999, 59[16], 10811-22