Interdiffusion in amorphous Ni-Si multi-layers was investigated by using an in situ X-ray diffraction technique. It was found that the temperature-dependent interdiffusivity, obtained by monitoring the decay of the first-order modulation peak as a function of annealing time, could be described by:

D(cm2/s) = 2.3 x 10-13exp[-0.61(eV)/kT]

at temperatures of between 423 and 613K. It was suggested that a retarded interstitial diffusion mechanism accounted for diffusion in the amorphous multi-layer films.

Interdiffusion Study of Amorphous Ni–Si Multilayer at Low Temperature. W.H.Wang, H.Y.Bai, W.K.Wang: Journal of Applied Physics, 1993, 74[4], 2471-4