It was found that the O diffusivity at between 1250 and 1405C could be described by:

D(cm2/s) = 1.35 x 102exp[-3.5(eV)/kT]

Diffusion of Oxygen in Silicon. R.A.Logan, A.J.Peters: Journal of Applied Physics, 1959, 30, 1627 and Journal of Applied Physics, 1957, 28, 819