A sensitive method was developed for the measurement of oxygen concentration profiles using the nuclear reaction, 18O(p,n)18F. By means of this activation technique, oxygen concentrations as low as 1015/cm3 could be determined in a 0.005mm layer. The temperature dependence of the diffusion coefficient was determined between 1000 and 1280C, and was described by:

D(cm2/s) = 2.26 x 101exp[-3.15(eV)/kT]

Oxygen Diffusion in Silicon and the Influence of Different Dopants. J.Gass, H.H.Müller, H.Stüssi, S.Schweitzer: Journal of Applied Physics, 1980, 51[4], 2030-7