Oxidized wafer samples were subjected to steam oxidation at between 700 and 1240C. The depth profiles of 18O tracers were determined using Cs+ secondary ion mass spectrometry. Over the temperature range studied, the diffusivity was described by:

D(cm2/s) = 7 x 10-2exp[-2.44(eV)/kT]

Diffusivity of Oxygen in Silicon during Steam Oxidation. J.C.Mikkelsen: Applied Physics Letters, 1982, 40[4], 336-8