The precipitation of oxygen was monitored by means of infra-red measurements, and the time constant for an exponential approach to equilibrium was obtained for various temperatures. Also, the number density of the precipitates was determined by using chemical etching, infra-red, and neutron scattering methods. The latter parameters were then used to estimate the diffusivity of oxygen in the bulk samples. It was found that the data (table 73) could be described by:
D(cm2/s) = 2 x 10-2exp[-2.42(eV)/kT]
between 650 and 1050C.
Diffusion Limited Precipitation of Oxygen in Dislocation-Free Silicon. M.J.Binns, W.P.Brown, J.G.Wilkes, R.C.Newman, F.M.Livingston, S.Messoloras, R.J.Stewart: Applied Physics Letters, 1983, 42[6], 525-7
Table 73
Diffusivity Data for O
Temperature (C) | D(cm2/s) |
650 | 2.2 x 10-15 |
700 | 1.1 x 10-14 |
750 | 3.3 x 10-14 |
800 | 1.1 x 10-13 |
850 | 3.5 x 10-13 |
900 | 1.4 x 10-12 |
950 | 1.8 x 10-12 |
1000 | 5.6 x 10-12 |
1050 | 1.2 x 10-12 |