The diffusivity was measured at between 270 and 400C by studying the recovery kinetics of stress-induced dichroism in an oxygen infrared absorption band. It was found that the present results, together with previous data, could be described by:

D(cm2/s) = 1.7 x 10-1exp[-2.54(eV)/kT]

at between 330 and 1240C. It was estimated that the oxygen hopping times were up to 100 times more rapid in crystals which were not heat-treated at 1350C.

Diffusivity of Oxygen in Silicon at the Donor Formation Temperature. M.Stavola, J.R.Patel, L.C.Kimerling, P.E.Freeland: Applied Physics Letters, 1983, 42[1], 73-5