By using the formation of a neutral acceptor-hydroxyl complex as a marker, the diffusion coefficient of a mobile O species in the p-type material was found to be described by:

D(cm2/s) = 3.0 x 10-10exp[-0.16(eV)/kT]

At 35C, the diffusivity of the unbound oxygen species was 30 times faster than the effective diffusivity of atomic H under similar conditions. An activation energy of 1.60eV was deduced for the thermal dissociation of this oxygen species from B.

Low-Temperature Oxygen Diffusion in Silicon. W.L.Hansen, S.J.Pearton, E.E.Haller: Applied Physics Letters, 1984, 44[9], 889-91