The solubility and diffusivity of O was studied between 1000 and 1375C using a charged particle activation technique. Wafers were heated in O or Ar, and the resultant depth profiles were determined by etching and 18F activity measurements. It was found that the diffusion results between 1150 and 1375C could be described by:

D(cm2/s) = 3.2 x 100exp[-2.92(eV)/kT]

At lower temperatures, the activation energy appeared to decrease with decreasing temperature.

Solubility and Diffusion Coefficient of Oxygen in Silicon. Y.Itoh, T.Nozaki: Japanese Journal of Applied Physics, 1985, 24[3], 279-84