The out-diffusion profiles of O in (111) samples of Czochralski material were studied at between 700 and 1160C, under an N atmosphere, steam oxidation, or P in-diffusion conditions, using secondary ion mass spectrometry. The diffusivity and solubility of O were determined by fitting the profiles to a simple diffusion model. The O diffusivity exhibited little or no dependence upon the processing conditions, and could be described by

D(cm2/s) = 1.4 x 10-1exp[-2.53(eV)/kT]

The results showed that point defects in Si had little effect upon O diffusion, and demonstrated that O diffused mainly via an interstitial mechanism.

Out-Diffusion and Diffusion Mechanism of Oxygen in Silicon. S.T.Lee, D.Nichols: Applied Physics Letters, 1985, 47[9], 1001-3