The diffusivity of O in heavily Sb-doped Czochralski-type material was measured, at temperatures ranging from 950 to 1100C, by means of secondary ion mass spectrometry. It was found that the diffusion coefficient exhibited no dependence upon the Sb concentration. The results (table 75) indicated a diffusion activation energy of 2.68eV.

Secondary Ion Mass Spectroscopy Determination of Oxygen Diffusion Coefficient in Heavily Sb Doped Si. M.Pagani: Journal of Applied Physics, 1990, 68[7], 3726-8