Samples of B-doped (about 1017/cm3) Czochralski material were heated to temperatures ranging from 800 to 1300C in H, and were then quenched. The concentration of [H-B] pairs was then measured by means of infra-red localized vibrational mode spectroscopy. It was concluded that the solubility of atomic H was greater than:

S(/cm3) = 5.6 x 1018 exp[-0.95(eV)/kT]

within the above temperature range. Undoped Czochralski material was also annealed under similar conditions. This showed that the diffusion of O (table 76) could be described by:

D(cm2/s) = 7.1 x 10-4exp[-2.0(eV)/kT]

Concentration of Atomic Hydrogen Diffused into Silicon in the Temperature Range 900–1300C. S.A.McQuaid, R.C.Newman, J.H.Tucker, E.C.Lightowlers, R.A.A.Kubiak, M.Golding: Applied Physics Letters, 1991, 58[25], 2933-5

Table 75

Diffusion of O in Sb-Doped Si