Direct measurements were made of the diffusivity of interstitial O in Sb-doped Czochralski material at temperatures ranging from 750 to 1150C (table 79). Using secondary ion mass spectroscopy of the out-diffusion profiles, it was shown that the diffusivity was the same as that for lightly B-doped crystals which were heated under identical conditions over the temperature range studied.

Temperature Dependence of Interstitial Oxygen Diffusion in Antimony-Doped Czochralski Silicon. A.S.Oates, W.Lin: Applied Physics Letters, 1988, 53[26], 2659-61