The diffusion of P from a POCl3 source at between 1150 and 1250 was found to be described by:

D(cm2/s) = 1.05 x 101exp[-3.70(eV)/kT]

The activation energies for diffusion on the (111) and (100) planes were identical. At higher impurity levels (higher P deposition temperatures), the diffusion coefficient increased and the activation energy decreased.

T.Ouchiyama, M.Katsuta: Shin Nippon Denki Giho, 1970, 5[2], 116-9