The diffusion of P into B-doped, p-type, (111)-oriented wafers was studied by using an open tube diffusion system and phosphine in N2 as the impurity source, and measuring the diffusion penetration via junction depth and sheet resistance techniques. The data for between 850 and 1150C (table 81) could be described by:

D(cm2/s) = 6 x 10-6exp[-1.90(eV)/kT]

Phosphorus Diffusion in Silicon Using Phosphine. Y.W.Hsueh: Journal of the Electrochemical Society, 1970, 117[6], 807-11