The tracer, 32P, was diffused into (111) float-zone material in an H2 atmosphere from an epitaxially grown 32P-doped Si source layer. The 32P diffusion profiles, obtained by sectioning and counting of each section, showed Fick-type behavior and provided much lower diffusion coefficients than reported in the literature using oxide dopant sources on a free surface. At between 1400 and 1600K, the results could be described by:

D(cm2/s) = 5 x 10-2exp[-3.3(eV)/kT]

Bulk Diffusion of Phosphorus in Silicon in Hydrogen Atmosphere. R.N.Ghoshtagore: Applied Physics Letters, 1970, 17[4], 137-8