It was shown that the diffusion of P from a doped oxide diffusion source was consistent with a previously derived model. Using this model, the diffusion coefficient was deduced. At between 1000 and 1200C, the activation energy for diffusion was determined to be 2.6eV for a surface concentration of 2 x 1020/cm3, and 3.7eV for a surface concentration of 5 x 1018/cm3.

Doped Oxides as Diffusion Sources. M.L.Barry: Journal of the Electrochemical Society, 1970, 117[11], 1405-10