Using activation analysis techniques, the diffusion of P into n-type epitaxial (0.08 to 0.12mm) layers was studied. It was found that the solute distributions could be fitted by the complementary error function. The diffusivities at between 1000 and 1200C could be described by:

D(cm2/s) = 1.5 x 10-2exp[-2.7(eV)/kT]

These were found to differ from the comparable diffusivity values for single crystals by a factor of between 10 and 15. This was attributed to the presence of structural imperfections in the epitaxial films.

A.S.Lyutovich, V.P.Prutkin, V.P.Pashkudenko, K.N.Sevastyanov, S.S.Shasaidov: Krist. Tonkikh. Plenok, 1970, 91-6