The diffusion of radioactive P atoms into epitaxial films at between 1000 and 1200K was found to be described by:

D(cm2/s) = 1.8 x 10-12exp[-2.7(eV)/kT]

At the lower temperature, these values were about one order of magnitude larger than those for single crystals. This was suggested to be due to increased migration of the impurity along defects. At the higher temperature, the coefficients for the two forms were closer to each other.

S.V.Starodubtsev, V.V.Kharchenko, V.P.Prutkin, A.S.Lyutovich: Protsessy Sin. Rosta Krist. Plenok Poluprovodnikov Materialy, 1971, Nauka, Novosibirsk, USSR, 195-9