An analysis of available data on P diffusion in Si showed that the diffusion profiles obtained depended markedly upon factors such as the presence of an oxidizing or non-oxidizing atmosphere, and the structure of the material. For intrinsic material in an oxidizing atmosphere, it was found that the results could be described by:

D(cm2/s) = 4.4 x 100exp[-3.67(eV)/kT]

between 1100 and 1300C.

U.Hartmann: Wiss. Z. Tech. Hochs., Ilmenau, 1974, 20[2], 75-92