The diffusion of P into amorphous material produced by ion plasma sputtering was studied. It was found that the temperature dependence of the diffusivity was described by:

D(cm2/s) = 1.3 x 10-12exp[-0.49(eV)/kT]

The difference in the diffusion coefficients of P in amorphous and crystalline material was greater than ten orders of magnitude at temperatures below 500C. This difference was attributed to a change in the diffusion mechanism.

A.F.Khokhlov, V.A.Panteleev, E.V.Dobrokhotov, G.A.Maksimov, V.A.Sidorov: Physica Status Solidi A, 1984, 81[1], K15-8

Table 84

Diffusivity of P in Profiled Si