The P diffusivity was measured, in samples with almost uniform As or B background doping, at temperatures of 915, 1015 and 1105C (table 85). It was found that diffusion via neutral and singly negatively charged point defects was sufficient to account for the experimental data, and that there was no need to include diffusion via doubly negatively charged point defects. A greatly reduced diffusivity was observed in B-doped samples, and this was consistent with the formation of immobile donor-acceptor pairs.

Diffusion of Phosphorus in Arsenic and Boron Doped Silicon. F.Wittel, S.Dunham: Applied Physics Letters, 1995, 66[11], 1415-7

Table 86

Diffusivity of P in Si