The diffusion of donor elements in fine-grained and coarse-grained polycrystalline material was studied at temperatures ranging from 900 to 1150C (table 87). Tracers (32P) were used to determine the concentration/depth profiles via sectioning. By means of autoradiography, the lateral distribution of the radiotracers over the sample surface was revealed.

Diffusion of Donor Elements (125Sb, 82P, 74(73)As) in Polycrystalline Silicon. F.H.M.Spit, H.Bakker: Physica Status Solidi A, 1986, 97[1], 135-42

Figure 11

Diffusivity of P in Si