Self-diffusion measurements were extended to 800 to 900C by monitoring 30Si diffusion in isotopically enriched structures. By comparing P and Si diffusion (table 89, figure 13) under non-equilibrium conditions, it was deduced that the interstitial-mediated fraction of self-diffusion lay between 0.50 and 0.62 at 800 to 1100C. This permitted activation enthalpies of 4.68 and 4.86eV to be determined for the interstitial and vacancy mechanisms, respectively.

Self-Diffusion in Silicon - Similarity between the Properties of Native Point Defects A.Ural, P.B.Griffin, J.D.Plummer: Physical Review Letters, 1999, 83[17], 3454-7