The migration of P was studied in intrinsic polycrystalline material and p-type bicrystals using radiotracer and etching techniques. It was found that the results were not greatly affected by heat treatment or by the presence of C. The results at between 900 and 1100C could be described by:

Dd(cm3/s) = 5.9 x 10-11exp[-1.4(eV)/kT]

J.L.Liotard, R.Bibérian, J.Cabané: Journal de Physique – Colloque Cl, 1982, 43[10], 213-8

Figure 12

Diffusivity of P in Si

(Open squares: interstitial mechanism D = 2.3 x 10-1exp[-2.6(eV)/kT], open circles: vacancy mechanism D = 7.6 x 104exp[-5.2(eV)/kT], filled circles: interstitial mechanism D = 4.9 x 10-6exp[-2.1(eV)/kT])

Table 88

Intrinsic Diffusivity of P in Si