The grain-boundary diffusion of dopants was reviewed. Literature data for thick and thin samples were analyzed by using an homogeneous semi-infinite substrate. It was concluded that grain-boundary diffusion could be readily analyzed by using the correct model. It was shown that the ratio of grain boundary to bulk diffusivity ranged from 103 to 105 and was a function of temperature and dopant type. Data obtained from thin-film systems were shown to be consistent with the Gilmer-Farrell thin-film model. This model was used to deduce that the diffusion could be described by:

D(cm2/s) = 4 x 10-3exp[-1.71(eV)/kT]

A.D.Buonaquisti, W.Carter, P.H.Holloway: Thin Solid Films, 1983, 100[3], 235-48

Table 89

Diffusivity Ratios of 30Si and P in Si during Oxidation at 800 to 1100C

obtained from thin-film systems were shown to be consistent with the Gilmer-Farrell thin-film model. This model was used to deduce that the diffusion could be described by:

D(cm2/s) = 4 x 10-3exp[-1.71(eV)/kT]

A.D.Buonaquisti, W.Carter, P.H.Holloway: Thin Solid Films, 1983, 100[3], 235-48

Table 89

Diffusivity Ratios of 30Si and P in Si during Oxidation at 800 to 1100C

Figure 13

Diffusion of P and Si in Si

Table 90

Grain Boundary Diffusion of P in Polycrystalline Si