The diffusivity of P in crystallized amorphous material was studied using secondary ion mass spectroscopy. A two-dimensional diffusion model was used to determine the effective grain and grain boundary diffusion coefficients. This indicated that the grain boundary diffusion coefficient was up to 10 times greater than the grain diffusion coefficient. The activation energy for grain boundary diffusion at between 700 and 850C was 3.66eV.

Phosphorus Diffusion in Polycrystalline Silicon. D.L.Losee, J.P.Lavine, E.A.Trabka, S.T.Lee, C.M.Jarman: Journal of Applied Physics, 1984, 55[4], 1218-20