The migration of radioactive P in polycrystalline material was studied at temperatures ranging from 566 to 980C. The diffusion profiles were determined by using anodic oxidation sectioning and radiotracer detection. The grain boundary diffusivities were obtained by using the LeClaire method. It was found that the results (table 90), assuming a boundary width of 5nm, were described by the expression:

D(cm2/s) = 4.8 x 10-3exp[-2.65(eV)/kT]

Grain Boundary Diffusion of Phosphorus in Polycrystalline Silicon. M.R.Murti, K.V.Reddy: Semiconductor Science and Technology, 1989, 4[8], 622-5