The first investigations of the diffusion of Pr in Si were reported. It was found that, at temperatures ranging from 1100 to 1250C, the Pr diffusivity increased from about 10-13 to about 1.5 x 10-12cm2/s. The temperature dependence of the diffusion coefficient could be described by:

D (cm2/s) = 5 x 10-3exp[-3.3(eV)/kT]

D.E.Nazyrov, G.S.Kulikov, R.S.Malkovich: Technical Physics Letters, 1997, 23[1], 68-9