The serial sectioning technique was used to study the diffusion of 35S in P-doped n-type crystals with a dislocation density of 5 x 104/cm2. It was found that the results between 975 and 1200C could be described by:

D(cm2/s) = 5.95 x 10-3exp[-1.83(eV)/kT]

P.L.Gruzin, S.V.Zemsky, A.D.Bulkin, N.M.Makarov: Fizika i Tekhnika Poluprovodnikov, 1973, 7[9], 1853-5