The diffusion of 35S into Si was investigated by using the closed-ampoule technique. Penetration profiles of erfc-type were determined by means of mechanical sectioning. It was found that the diffusion coefficients at temperatures ranging from 1328 to 1671K (table 95) obeyed the Arrhenius law:

D(cm2/s) = 4.7 x 10-2exp[-1.80(eV)/kT]

The high diffusivity could be reconciled with the preferred incorporation of S on lattice sites by supposing substitutional-interstitial exchange. Under this assumption, the long-range transport appeared to be controlled by a minority of interstitial S atoms.

Diffusion of Sulfur-35 into Silicon using an Elemental Vapor Source. F.Rollert, N.A.Stolwijk, H.Mehrer: Applied Physics Letters, 1993, 63[4], 506-8

Table 95

Diffusion of 35S in Si as a Function of Temperature