The serial sectioning method was used to study the diffusion of 124Sb into 0.005 to 0.01mm thick epitaxial films of p-type material. It was found that, at dislocation densities of between 103 and 104/cm2, the diffusivities measured agreed with those for Sb diffusion in single crystals of Si. At between 1250 end 1500K, the data could be described by:

D(cm2/s) = 7.9 x 100exp[-3.98(eV)/kT]

However, at dislocation densities of between 3 x 106 and 6 x 106/cm2, the results were described by:

D(cm2/s) = 4.4 x 100exp[-3.76(eV)/kT]

over the same temperature range.

V.A.Uskov, S.P.Svetlov: Izvestiya Vysshikh Uchebnykh Zavedenii Fizika, 1972, 15[7], 145-7