The transfer of impurities from Si substrates into growing epitaxial films deposited in vacuum at between 600 and 900C was studied. From the penetration depth as a function of temperature, it was deduced that the activation energy for diffusion was 1.53eV.

U.A.Arifov, A.S.Lyutovich, M.J.Kardzhaubaev, A.N.Suvorov: Izvestiya Akademii Nauk Uzb. SSSR – Fiz. Mat. Nauk, 1974, 18[5], 61-2