Samples were prepared from (111)-oriented p-type single-crystal wafers, and Sb-doped SiO2 was chemical vapor deposited onto the surface. Diffusion experiments were carried out with surface concentrations of 5 x 1018, 1019 or 4.5 x 1019atoms/cm3. The concentration profiles were determined using resistivity measurements. Corresponding to the latter three concentrations, the diffusion coefficients between 1000 and 1150C could be described by:

D(cm2/s) = 9.7 x 103exp[-4.87(eV)/kT]

D(cm2/s) = 3.65 x 102exp[-4.44(eV)/kT]

D(cm2/s) = 1.43 x 102exp[-4.30(eV)/kT]

respectively.

Antimony Diffusion into Silicon by the Doped Oxide Method. S.H.Song, S.Matsumoto, T.Niimi: Japanese Journal of Applied Physics, 1979, 18[11], 2181-2

Table 96

Diffusivity of Sb in Si