The migration of Sb in fine-grained and coarse-grained samples was studied between 930 and 1150C using Sb autoradiography and sectioning techniques. The results could be described by:

D(cm2/s) = 1.346 x 101exp[-3.9(eV)/kT]

It was considered that an important role was played by dislocation formation during diffusion annealing.

Diffusion of Antimony (125Sb) in Polycrystalline Silicon . F.H.M.Spit, H.Albers, A.Lubbes, Q.J.A.Rijke, L.J.Ruijven, J.P.A.Westerveld, H.Bakker, S.Radelaar: Physica Status Solidi A, 1985, 89[1], 105-15