Enhanced Sb diffusion was investigated in biaxially compressed Si1-xGex layers, where x was equal to 0.1 or 0.2. It was shown that the contribution of biaxial strain to the enhancement increased, with increasing misfit compression, from a factor of about 3 at 0.73GPa (x = 0.1) to about 10 at 1.40GPa (x = 0.2). By assuming that the pre-factors were independent of stress, the Sb diffusion coefficients in biaxially compressed Si0.9Ge0.1 and Si0.8Ge0.2 (table 98) could be described by:

D (cm2/s) = 4 x 101exp[-3.98(eV)/kT]

and

D (cm2/s) = 1.3 x 102exp[-3.85(eV)/kT]

respectively.

Sb-Enhanced Diffusion in Strained Si1-xGex A.J.Kuznetsov, J.Cardenas, D.C.Schmidt, B.G.Svensson, J.L.Hansen, A.N.Larsen: Physical Review B, 1999, 59[11], 7274-7

Table 100

Diffusivity Ratios of 30Si and Sb in Si during Oxidation at 800 to 1100C

Figure 14

Diffusion of Sb and Si in Si